Octave-spanning mid-infrared supercontinuum generation in silicon nanowaveguides.
نویسندگان
چکیده
We report, to the best of our knowledge, the first demonstration of octave-spanning supercontinuum generation (SCG) on a silicon chip, spanning from the telecommunications c-band near 1.5 μm to the mid-infrared region beyond 3.6 μm. The SCG presented here is characterized by soliton fission and dispersive radiation across two zero group-velocity dispersion wavelengths. In addition, we numerically investigate the role of multiphoton absorption and free carriers, confirming that these nonlinear loss mechanisms are not detrimental to SCG in this regime.
منابع مشابه
Supercontinuum generation in silicon waveguides relying on wave-breaking.
Four-wave-mixing processes enabled during optical wave-breaking (OWB) are exploited in this paper for supercontinuum generation. Unlike conventional approaches based on OWB, phase-matching is achieved here for these nonlinear interactions, and, consequently, new frequency production becomes more efficient. We take advantage of this kind of pulse propagation to obtain numerically a coherent octa...
متن کاملNonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared
Group IV photonics hold great potential for nonlinear applications in the nearand mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We ...
متن کاملVisible-to-near-infrared octave spanning supercontinuum generation in a silicon nitride waveguide.
The generation of an octave spanning supercontinuum covering 488-978 nm (at -30 dB) is demonstrated for the first time on-chip. This result is achieved by dispersion engineering a 1-cm-long Si3N4 waveguide and pumping it with an 100-fs Ti:Sapphire laser emitting at 795 nm. This work offers a bright broadband source for biophotonic applications and frequency metrology.
متن کاملOctave spanning supercontinuum generation in InGaP waveguides on a silicon substrate at 1550 nm
We present an octave spanning supercontinuum (at the -35 dB level) ranging from 1100 nm to 2500 nm in InGaP photonic wire waveguides that are bonded to a silicon substrate and pumped by an ultrashort pulsed laser centered at 1550 nm. OCIS codes: (130.4310) Integrated optics, Nonlinear; (190.4400) Nonlinear optics, materials; (320.6629) Ultrafast optics, supercontinuum generation; (90.4390) Nonl...
متن کاملGigahertz frequency comb offset stabilization based on supercontinuum generation in silicon nitride waveguides.
Silicon nitride (Si3N4) waveguides represent a novel photonic platform that is ideally suited for energy efficient and ultrabroadband nonlinear interactions from the visible to the mid-infrared. Chip-based supercontinuum generation in Si3N4 offers a path towards a fully-integrated and highly compact comb source for sensing and time-and-frequency metro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics letters
دوره 39 15 شماره
صفحات -
تاریخ انتشار 2014